Eight-channel SiNx microring-resonator based photonic biosensor for label-free fluid analysis in the optical C-band.

A lab-on-a-chip multichannel sensing platform for biomedical analysis based on optical silicon nitride (SiNx) microring-resonators (MRR) was established. The resonators were surface functionalized and finally combined with a microfluidic chamber for validation using an avidin-biotin ligand-binding assay. The results with a limit of detection (LOD) of 2.3∙10-5 and a mean intra-assay coefficient of variation (CV) of ±10.0 %, also under consideration of FDA guidelines, show promising future applicability for a wide variety of targets in the field of outpatient medical diagnostics and life science.Clinical Relevance- Biomarkers play a crucial role in physiological processes of the human body. To enable instantaneous and decentralized analysis of these markers, systems are needed that can be used in a laboratory-independent environment with minimal amounts of biofluid. An example is the utilization of such systems for neonates or infants.

Photonic-enabled beam steering at 300†GHz using a photodiode-based antenna array and a polymer-based optical phased array.

For wireless networks beyond 5G, directivity and reconfigurability of antennas are highly relevant. Therefore, we propose a linear antenna array based on photodiodes operating at 300 GHz, and an optical phased array based on polymer waveguides to orchestrate the antennas. Due to its low thermal conductivity and high thermo-optical coefficient, the polymer chip enables highly efficient and crosstalk-free phase shifting. With these, we demonstrate purely photonic-controlled beam steering across 20°. Compared to a single emitter, the 3-dB beam width is reduced by 8.5° to 22.5° and the output power is >10 dB higher. Employing Snell's law for coupling into air, we can precisely predict the radiation patterns.

Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers.

High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are investigated. From the irregularity of the longitudinal mode spacing in the comb spectra, we confirm that under stable passive mode locking, both devices have strong group velocity dispersion (GVD) and corresponding GVD-induced pulse width broadening. After compensation with anomalous dispersion fibers (SMF-28), short pulse trains with sub-ps pulse widths are achieved for both devices. This observation demonstrates our ability to generate high peak power sub-ps pulses using QD MLLs and QW MLLs for many photonic applications of optical communications.

Photonic integrated circuit with sampled grating lasers fabricated on a generic foundry platform for broadband terahertz generation.

We demonstrate a monolithically integrated photonic integrated circuit (PIC) for terahertz spectroscopy with wide spectral bandwidth. The PIC includes two widely tunable sampled grating DBR (SG DBR) lasers, semiconductor optical amplifiers (SOAs), and passive components to combine signals. The SG DBR lasers cover 22 nm and 24 nm tuning range, respectively, with 4 nm overlap in the C band. The side mode suppression ratio (SMSR) exceeds 37 dB with a linewidth below 4.3 MHz. We used the PIC to generate THz radiation with a state-of-the-art photodiode emitter. The measured THz power spectrum between 0.03 and 1 THz compares well with the spectrum generated with commercial tunable laser sources. This demonstrates the suitability of our PIC for future miniaturized continuous wave (cw) THz systems.

Strain-free SESAMs with iron doped absorber for femtosecond fiber laser mode locking at 1560†nm.

Semiconductor saturable absorber mirrors (SESAMs) are key devices for passive mode locking of numerous laser types and have been implemented for a variety of operational wavelengths ranging from 800 nm to 2400 nm. However, for 1560 nm the fabrication of SESAMs based on the standard AlAs/GaAs material system requires highly strained InGaAs absorber layers, which reduce the device efficiency and compromise fragile long-term performance. Here, we present SESAMs for ultrashort pulse generation at 1560 nm that are grown entirely lattice-matched to InP and thus have the potential for less structural defects and a higher operational lifetime. A highly reflective InGaAlAs-InAlAs Bragg mirror is capped with a heavily iron doped InGaAs:Fe absorber layer, which facilitates an unprecedented combination of sub-picosecond carrier lifetime and high optical quality. Therefore, the presented SESAMs show ultrafast response (τA < 1 ps), low non-saturable losses and high effective modulation depth (ΔReff ≥ 5.8%). Moreover, a nearly anti-resonant SESAM design provides high saturation and roll-over fluence (Fsat ≥ 17  µJ/cm2, F2 ≥ 21 mJ/cm2). With these SESAMs, we show self-starting and stable mode locking of an erbium doped fiber laser at 80 MHz repetition rate, providing ultrashort optical pulses at 17.5  mW average power.

Ultrabroadband terahertz time-domain spectroscopy using III-V photoconductive membranes on silicon.

Electromagnetic waves in the terahertz (THz) frequency range are widely used in spectroscopy, imaging and sensing. However, commercial, table-top systems covering the entire frequency range from 100 GHz to 10 THz are not available today. Fiber-coupled spectrometers, which employ photoconductive antennas as emitters and receivers, show a bandwidth limited to 6.5 THz and some suffer from spectral artifacts above 4 THz. For these systems, we identify THz absorption in the polar substrate of the photoconductive antenna as the main reason for these limitations. To overcome them, we developed photoconductive membrane (PCM) antennas, which consist of a 1.2 µm-thin InGaAs layer bonded on a Si substrate. These antennas combine efficient THz generation and detection in InGaAs with absorption-free THz transmission through a Si substrate. With these devices, we demonstrate a fiber-coupled THz spectrometer with a total bandwidth of 10 THz and an artifact-free spectrum up to 6 THz. The PCM antennas present a promising path toward fiber-coupled, ultrabroadband THz spectrometers.

Radiation pattern of planar optoelectronic antennas for broadband continuous-wave terahertz emission.

In future wireless communication networks at terahertz frequencies, the directivity and the beam profile of the emitters are highly relevant since no additional beam forming optics can be placed in free-space between the emitter and receiver. We investigated the radiation pattern and the polarization of broadband continuous-wave (cw) terahertz emitters experimentally and by numerical simulations between 100 GHz and 500 GHz. The emitters are indium phosphide (InP) photodiodes with attached planar antenna, mounted on a hyper-hemispherical silicon lens and integrated into a fiber-pigtailed module. As both packaging and material of the emitter was identical for all devices, similarities and differences can be directly linked to the antenna structure. We found that the feeding point structure that connects photodiode and antenna has a large influence on the radiation pattern. By optimizing the feeding point, we could reduce side lobes from -2 dB to -13 dB and narrow the 6dB beam angle from ±14° to ±9° at 300 GHz.

Optoelectronic frequency-modulated continuous-wave terahertz spectroscopy with 4 THz bandwidth.

Broadband terahertz spectroscopy enables many promising applications in science and industry alike. However, the complexity of existing terahertz systems has as yet prevented the breakthrough of this technology. In particular, established terahertz time-domain spectroscopy (TDS) schemes rely on complex femtosecond lasers and optical delay lines. Here, we present a method for optoelectronic, frequency-modulated continuous-wave (FMCW) terahertz sensing, which is a powerful tool for broadband spectroscopy and industrial non-destructive testing. In our method, a frequency-swept optical beat signal generates the terahertz field, which is then coherently detected by photomixing, employing a time-delayed copy of the same beat signal. Consequently, the receiver current is inherently phase-modulated without additional modulator. Owing to this technique, our broadband terahertz spectrometer performs (200 Hz measurement rate, or 4 THz bandwidth and 117 dB peak dynamic range with averaging) comparably to state-of-the-art terahertz-TDS systems, yet with significantly reduced complexity. Thickness measurements of multilayer dielectric samples with layer-thicknesses down to 23 µm show its potential for real-world applications. Within only 0.2 s measurement time, an uncertainty of less than 2 % is achieved, the highest accuracy reported with continuous-wave terahertz spectroscopy. Hence, the optoelectronic FMCW approach paves the way towards broadband and compact terahertz spectrometers that combine fiber optics and photonic integration technologies.

Fiber Coupled Transceiver with 6.5 THz Bandwidth for Terahertz Time-Domain Spectroscopy in Reflection Geometry.

We present a fiber coupled transceiver head for terahertz (THz) time-domain reflection measurements. The monolithically integrated transceiver chip is based on iron (Fe) doped In0.53Ga0.47As (InGaAs:Fe) grown by molecular beam epitaxy. Due to its ultrashort electron lifetime and high mobility, InGaAs:Fe is very well suited as both THz emitter and receiver. A record THz bandwidth of 6.5 THz and a peak dynamic range of up to 75 dB are achieved. In addition, we present THz imaging in reflection geometry with a spatial resolution as good as 130 µm. Hence, this THz transceiver is a promising device for industrial THz sensing applications.

Highly efficient passive InP polarization rotator-splitter.

Monolithically integrated polarization beam splitters (PBSs) are needed to reduce the form-factor and assembly cost of optical coherent receivers. A highly efficient passive polarization rotator and splitter based on mode-evolution is demonstrated. The device is fabricated on InP substrate with a single etch-step and uses an adiabatic mode-converter and an asymmetric Y-coupler. Despite its simple fabrication process, the device shows a polarization extinction ratio (PER) better than 19 dB over 1520 nm to 1620 nm, thus covering both C- and L-band. The peak value of 24 dB is obtained for TE and TM polarizations. Its fabrication tolerance is large, so that even under a width variation of +/- 200 nm the PER remains above 17 dB over the entire C- and L-band.

Improving the dynamic range of InGaAs-based THz detectors by localized beryllium doping: up to 70 dB at 3 THz.

In this Letter, we report on photoconductive terahertz (THz) detectors for 1550 nm excitation based on a low-temperature-grown InGaAs/InAlAs superlattice with a localized beryllium doping profile. With this approach, we address the inherent lifetime-mobility trade-off that arises, since trapping centers also act as scattering sites for photo-excited electrons. The localized doping of the InAlAs barrier only leads to faster electron trapping for a given mobility. As a result, we obtain THz detectors with more than 6 THz bandwidths and 70 dB dynamic ranges (DNRs) at 3 THz and 55 dB DNR at 4 THz. To the best of our knowledge, this is the highest DNR for photoconductive THz time-domain spectroscopy systems published so far.

Terahertz quasi time-domain spectroscopy based on telecom technology for 1550 nm.

We present a fiber-coupled terahertz quasi time-domain spectroscopy system driven by a laser with a central wavelength of 1550 nm. By using a commercially available multimode laser diode in combination with state-of-the-art continuous wave antennas, a bandwidth of more than 1.8 THz is achieved. The peak signal-to-noise ratio is around 60 dB. A simulation based on the optical spectrum of the laser diode and the transfer function of the THz path is in agreement with the experimental results. The system is used to extract the refractive index from two different samples and the results indicate that the performance is up to 1.8 THz comparable to a terahertz time-domain spectroscopy system.

Fiber-coupled transceiver for terahertz reflection measurements with a 4.5 THz bandwidth.

We present a fiber-coupled transceiver for THz time-domain spectroscopy, which combines an emitter and a receiver on a single photoconductive chip. With a bandwidth of 4.5 THz and a peak dynamic range larger than 70 dB, it allows for THz reflection measurements under normal incidence. This THz reflection head is a promising device for applications in such fields as material inspection and nondestructive testing.

Absolute terahertz power measurement of a time-domain spectroscopy system.

We report on, to the best of our knowledge, the first absolute terahertz (THz) power measurement of a photoconductive emitter developed for time-domain spectroscopy (TDS). The broadband THz radiation emitted by a photoconductor optimized for the excitation with 1550-nm femtosecond pulses was measured by an ultrathin pyroelectric thin-film (UPTF) detector. We show that this detector has a spectrally flat transmission between 100 GHz and 5 THz due to special conductive electrodes on both sides of the UPTF. Its flat responsivity allows the calibration with a standard detector that is traceable to the International System of Units (SI) at the THz detector calibration facility of PTB. Absolute THz power in the range from below 1 µW to above 0.1 mW was measured.

All fiber-coupled THz-TDS system with kHz measurement rate based on electronically controlled optical sampling.

We demonstrate a completely fiber-coupled terahertz (THz) time-domain spectrometer (TDS) system based on electronically controlled optical sampling with two erbium-doped femtosecond fiber lasers at a central wavelength of 1560 nm. The system employs optimized InGaAs/InAlAs photoconductive antennas for THz generation and detection. With this system, we achieve measurement rates of up to 8 kHz and up to 180 ps scan range. We further achieve 2 THz spectral bandwidth and a dynamic range of 76 dB at only 500 ms measurement time.

Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range.

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB.

Multichannel terahertz time-domain spectroscopy system at 1030 nm excitation wavelength.

We present Terahertz (THz) imaging with a 1D multichannel time-domain spectroscopy (TDS) system which operates with a photoconductive array of 15 detection channels excited by a 1030 nm femtosecond fiber laser. The emitter and detector are photoconductive antennas based on InGaAs/InAlAs multi-layer heterostructures (MLHS). We characterized the THz optics and the resolution of the system. The performance is demonstrated by the multichannel imaging of two samples. A simultaneous measurement of 15 THz pulses with a pixel pitch of 1 mm increases the measurement speed of the TDS system by factor 15.

Telecom technology based continuous wave terahertz photomixing system with 105 decibel signal-to-noise ratio and 3.5 terahertz bandwidth.

A modified photoconductive receiver significantly improves the performance of photomixing-based continuous wave (cw) THz systems driven at the optical telecommunication wavelength of 1.5 µm. The achieved signal-to-noise ratio of 105 dB at 100 GHz and 70 dB at 1 THz, both for an integration time of 200 ms, are to our knowledge the highest numbers reported in literature for any optoelectronic cw THz system, including classical setups operating at 800 nm. The developed receiver allows for combining low cost and high performance in one system for the first time to our knowledge.

Photonic-integrated circuit for continuous-wave THz generation.

We demonstrate a photonic-integrated circuit for continuous-wave (cw) terahertz (THz) generation. By comprising two lasers and an optical phase modulator on a single chip, the full control of the THz signal is enabled via a unique bidirectional operation technique. Integrated heaters allow for continuous tuning of the THz frequency over 570 GHz. Applied to a coherent cw THz photomixing system operated at 1.5 µm optical wavelength, we reach a signal-to-noise ratio of 44 dB at 1.25 THz, which is identical to the performance of a standard system based on discrete components.

Polarization insensitive 25-Gbaud direct D(Q)PSK receiver based on polymer planar lightwave hybrid integration platform.

We report a direct DPSK receiver based on polymer planar lightwave circuit technology, which incorporates a 2x25 GHz photodiode (PD) array hybridly integrated via 45° mirrors. In this direct DPSK receiver, a half-wave plate and heating electrodes are implemented to eliminate the polarization-dependent frequency-shift (PDFS) of the delay-line interferometer (DLI). By applying a proper heating current, a residual PDFS of practically zero at 1550 nm and within ±125 MHz was achieved over the full C-band. Integrated with the PD array, the peak responsivity is ~0.14 A/W for orthogonal polarizations over the C-band. To characterize this direct receiver, we introduce an adapted common-mode rejection ratio (CMRR), which takes into account the unequal responsivities of the PDs, the uneven split of the input power by the DLI, the phase error and the extinction ratio of the DLI. The measured CMRR under DC condition is below -20 dB over the C-band.